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Image Series Name Parts Number Size(mm3) Spec-sheet
Epi Wafer n-Type GaN 2" (50.8㎜)
Feature
n-Type GaN Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
n-GaN / u-GaN / Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
 
Characteristics (at 25℃)
Parameter Typ. Test Conditions
PL measurement Peak wavelength 364㎚±1㎚ Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD <3%
FWHM <10㎚
FWHM STD <3%
Thickness Thickness 4㎛+/-10%
Thickness STD <10%
XRD (002) <400 arcsec Panalytical
HRXRD
(102) <500 arcsec
Hall Carrier Concentration < -1×1018 /㎝ Accent
HL5500
Mobility >200 ㎠/V·sec
Doping material Si used -
Mg N/A
 
Technical inquiry : jinjoo@geni-uv.com / Jin, Joo (Director of Research)